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HN58X24512I - Two-wire serial interface 512k EEPROM (64-kword 8-bit)

Datasheet Summary

Description

HN58X24512I is the two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM).

It realizes high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology.

Features

  • Single supply: 1.8 V to 5.5 V Two-wire serial interface (I2CTM serial bus.
  • 1) Clock frequency: 1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 2.5 V) Power dissipation:  Standby: 3 µA (max)  Active (Read): 2 mA (max)  Active (Write): 5 mA (max) Automatic page write: 128-byte/page Write cycle time: 10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 2.5 V) Endurance: 10 5 Cycles (Page write mode) Data retention: 10 Years.
  • Prelimi.

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Datasheet Details

Part number HN58X24512I
Manufacturer Hitachi Semiconductor
File Size 55.57 KB
Description Two-wire serial interface 512k EEPROM (64-kword 8-bit)
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HN58X24512I Two-wire serial interface 512k EEPROM (64-kword × 8-bit) ADE-203-1239 (Z) Preliminary Rev. 0.0 Jan. 10, 2001 Description HN58X24512I is the two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. It also has a 128byte page programming function to make it’s write operation faster. Note: Hitachi’s serial EEPROM are authorized for using consumer applications such as cellular phone, camcorders, audio equipment. Therefore, please contact Hitachi’s sales office before using industrial applications such as automotive systems, embedded controllers, and meters.
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